Kastalsky, A : rechercher sur Z-Library

Grinberg, A.A., Kastalsky, A., Luryi, S.

Année:

1986

Langue:

english

Fichier:

PDF, 1.17 MB

english, 1986

Theory of hot-electron injection in CHINT/NERFET devices

Journal:

Kleinsasser, A. W., Kastalsky, A.

Année:

1987

Langue:

english

Fichier:

PDF, 1.10 MB

english, 1987

Excess voltage and resistance in superconductor-semiconductor junctions

Journal:

Physical Review B

Année:

1993

Langue:

english

Fichier:

PDF, 211 KB

english, 1993

Microwave generation in NERFET

A. Kastalsky, R. Kiehl, S. Luryi, A. Gossard, R. Hendel

Journal:

IEEE Electron Device Letters

Année:

1984

Langue:

english

Fichier:

PDF, 376 KB

english, 1984

Conductance of small semiconductor devices

A.A. Kastalsky, M.S. Shur

Journal:

A. Kastalsky, J.C.M. Hwang

Année:

1981

Langue:

english

Fichier:

PDF, 206 KB

english, 1981

Study of persistent photoconductivity effect in n-type selectively doped AlGaAs/GaAs heterojunction

Journal:

Année:

1984

Langue:

english

Fichier:

PDF, 530 KB

english, 1984

Many-body and disorder effects in the optical spectra of extremely high density Be δ-doped GaAs

M. Fritze, A. Kastalsky, J.E. Cunningham, W.H. Knox, R.N. Pathak, I.E. Perakis

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Année:

1996

Langue:

english

Fichier:

PDF, 540 KB

english, 1996

Current-controlled hot-electron instability in the four-terminal heterostructure device

A. Kastalsky, M. Milshtein, L.G. Shantharama, J. Harbison, L. Florez

Journal:

Solid-State Electronics

Année:

1989

Langue:

english

Fichier:

PDF, 414 KB

english, 1989

New features of real-space hot-electron transfer in the NERFET

A. Kastalsky, M. Milshtein, L.G. Shantharama, J. Harbison, L. Florez

Journal:

Solid-State Electronics

Année:

1989

Langue:

english

Fichier:

PDF, 255 KB

english, 1989

Effect of subband splitting on Si inversion layers

A. Kastalsky, F.F. Fang

Journal:

Surface Science Letters

Année:

1982

Langue:

english

Fichier:

PDF, 49 KB

english, 1982

Semiconductor high-energy radiation scintillation detector

A. Kastalsky, S. Luryi, B. Spivak

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 220 KB

english, 2006

Epitaxial InGaAsP/InP photodiode for registration of InP scintillation

S. Luryi, A. Kastalsky, M. Gouzman, N. Lifshitz, O. Semyonov, M. Stanacevic, A. Subashiev, V. Kuzminsky, W. Cheng, V. Smagin, Z. Chen, J.H. Abeles, W.K. Chan, Z.A. Shellenbarger

Journal:

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Année:

2010

Langue:

english

Fichier:

PDF, 606 KB

english, 2010

Hot electron injection devices

Serge Luryi, Alexander Kastalsky

Journal:

Superlattices and Microstructures

Année:

1985

Langue:

english

Fichier:

PDF, 908 KB

english, 1985

Superconductive proximity-effects in Nb on InGaAs-based heterostructures

L.H. Greene, A. Kastalsky, J.B. Barner, R. Bhat

Journal:

Physica B: Condensed Matter

Année:

1990

Langue:

english

Fichier:

PDF, 415 KB

english, 1990

Superconductor/semiconductor step junctions: the basic element for hybrid three terminal devices

S.G Lachenmann, A Förster, I Friedrich, D Uhlisch, Th Schäpers, A Kastalsky, A.A Golubov

Journal:

Applied Superconductivity

Année:

1999

Langue:

english

Fichier:

PDF, 173 KB

english, 1999

Properties of Nb/InAs/Nb hybrid step junctions

S. G. Lachenmann, A. Kastalsky, I. Friedrich, A. Förster, D. Uhlisch

Journal:

Journal of Low Temperature Physics

Année:

1997

Langue:

english

Fichier:

PDF, 314 KB

english, 1997

Resonant photon-drag effect for interband absorption in a single quantum well

A. Kastalsky

Journal:

Czechoslovak Journal of Physics

Année:

1988

Langue:

english

Fichier:

PDF, 379 KB

english, 1988

Negative-resistance field-effect transistor grown by organometallic chemical vapor deposition

A. Kastalsky, R. Bhat, W.K. Chan, M. Koza

Journal:

Solid-State Electronics

Année:

1986

Langue:

english

Fichier:

PDF, 724 KB

english, 1986

Novel hybrid Nb/InAs/Nb step junctions

S. G. Lachenmann, A. Kastalsky, I. Friedrich, A. Förster, A. V. Ustinov, D. Uhlisch

Journal:

Année:

1996

Langue:

english

Fichier:

PDF, 257 KB

english, 1996

Charge injection transistor based on real-space hot-electron transfer

Luryi, S., Kastalsky, A., Gossard, A.C., Hendel, R.H.

Journal:

Année:

1984

Langue:

english

Fichier:

PDF, 1.16 MB

english, 1984

New infrared detector on a silicon chip

Luryi, S., Kastalsky, A., Bean, J.C.

Journal:

Année:

1984

Langue:

english

Fichier:

PDF, 863 KB

english, 1984

IIA-2 OMCVD Grown high gain modulation doped AlGaAs/GaAs transistors with no I-V collapse

Bhat, R., Chan, W.K., Kastalsky, A., Koza, M.A.

Journal:

IEEE Journal of Quantum Electronics

Année:

1985

Langue:

english

Fichier:

PDF, 170 KB

english, 1985

Observation of pair currents in superconductor-semiconductor contacts

Kastalsky, A., Kleinsasser, A. W., Greene, L. H., Bhat, R., Milliken, F. P., Harbison, J. P.

Journal:

Physical Review Letters

Année:

1991

Langue:

english

Fichier:

PDF, 197 KB

english, 1991

Proximity-effect superconductive tunneling in Nb on InGaAs/InP/InGaAs heterostructures

Kastalsky, A., Greene, L., Barner, J., Bhat, R.

Journal:

Physical Review Letters

Année:

1990

Langue:

english

Fichier:

PDF, 201 KB

english, 1990

Infrared intraband laser induced in a multiple-quantum-well interband laser

Kastalsky, A.

Journal:

Année:

1993

Langue:

english

Fichier:

PDF, 445 KB

english, 1993

A dual-color injection laser based on intra- and inter-band carrier transitions in semiconductor quantum wells or quantum dots

Kastalsky, A., Vorobjev, L.E., Firsov, A., Zerova, V.L., Towe, E.

Journal:

IEEE Journal of Quantum Electronics

Année:

2001

Langue:

english

Fichier:

PDF, 138 KB

english, 2001

Effect of subband splitting on Si inversion layers

A. Kastalsky, F.F. Fang

Journal:

Surface Science

Année:

1982

Langue:

english

Fichier:

PDF, 444 KB

english, 1982

Transport properties of selectively doped GaAs-(AlGa)As heterostructures grown by molecular beam epitaxy

Hwang, J. C. M., Kastalsky, A., StoÌrmer, H. L., Keramidas, V. G.

Journal:

Année:

1984

Langue:

english

Fichier:

PDF, 429 KB

english, 1984

Nonlinear transport phenomena in a triangular quantum well

Kastalsky, A., Peeters, F., Chan, W. K., Florez, L. T., Harbison, J. P.

Journal:

Année:

1991

Langue:

english

Fichier:

PDF, 615 KB

english, 1991

Current-controlled negative differential resistance in four-terminal heterostructure devices

Kastalsky, A., Milshtein, M., Shantharama, L. G., Harbison, J., Florez, L.

Journal:

Journal of Lightwave Technology

Année:

1989

Langue:

english

Fichier:

PDF, 591 KB

english, 1989

[IEEE EQEC'96. 1996 European Quantum Electronic Conference - Hamburg, Germany (1996.09.8-1996.09.13)] EQEC 96 1996 European Quantum Electronic Conference EQEC-96 - Interaction of Far-Infrared Radiation With Hot Two-Dimensional Carriers in the Quantum Wells GaAs/Al/sub 1-x/Ga/sub x/As and Ge/Ge/sub 1-x/Si/sub x/

Vorobjev, I.E., Donetsky, D.V., Golub, I.F., Aleshkin, V.Y., Kuznetsov, O.A., Orlov, I.K., Kastalsky, A., Towe, E., Sun, D.

Année:

1996

Langue:

english

Fichier:

PDF, 93 KB

english, 1996

Novel single quantum well optoelectronic devices based on exciton bleaching

Abeles, J., Kastalsky, A., Leheny, R.

Journal:

Année:

1987

Langue:

english

Fichier:

PDF, 1.79 MB

english, 1987

[IEEE IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. . - Ithaca, NY (August 10-12, 1987)] IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 1987. Proceedings. - Novel High-speed Transistor Based On Charge Emission From A Quantum Well

Kastalsky, A., Grinberg, A.

Année:

1987

Langue:

english

Fichier:

PDF, 405 KB

english, 1987

[IRE 1986 International Electron Devices Meeting - ()] 1986 International Electron Devices Meeting - The application of OMCVD to high performance two-dimensional electron gas structures

Bhat, R., Kastalsky, A., Chan, W.K., Abeles, J.H., Nottenburg, R.N.

Année:

1986

Langue:

english

Fichier:

PDF, 340 KB

english, 1986

A field-effect transistor with a negative differential resistance

Kastalsky, A., Luryi, S., Gossard, A.C., Hendel, R.

Journal:

IEEE Electron Device Letters

Année:

1984

Langue:

english

Fichier:

PDF, 419 KB

A. Grinberg, A. Kastalsky

Année:

1989

Langue:

english

Fichier:

PDF, 1.12 MB

english, 1989

[IRE 1982 International Electron Devices Meeting - ()] 1982 International Electron Devices Meeting - Material and device considerations for selectively doped heterojunction transistors

DiLorenzo, J.V., Dingle, R., Feuer, M., Gossard, A.C., Hendel, R., Hwang, J.C.M., Kastalsky, A., Keramidas, V.G., Kiehl, R.A., O'Connor, P.

Année:

1982

Langue:

english

Fichier:

PDF, 368 KB

english, 1982

Anomalous photomagnetoresistance effect in modulation-doped AlGaAs/GaAs heterostructures

S. Luryi, A. Kastalsky

Année:

1984

Langue:

english

Fichier:

PDF, 600 KB

english, 1984

Hydrogenation of multiple-quantum-well optical-modulator structures

Woodward, T. K., Cunningham, J. E., Jan, W. Y., Kastalsky, A.

Journal: